JMnic Product Specification 2SB919 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD1235 ・Low collector saturation voltage ・Large current capacity APPLICATIONS ・Large current switching of relay drivers, high-speed inverters,converters PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -8 A ICM Collector current-Peak -15 A PC Collector dissipation Ta=25℃ 1.75 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ JMnic Product Specification 2SB919 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; RBE=∞ -30 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -6 V Collector-emitter saturation voltage IC=-3A; IB=-0.15A -0.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 70 hFE-2 DC current gain IC=-4A ; VCE=-2V 30 Transition frequency IC=-1A ; VCE=-5V VCEsat fT CONDITIONS MIN TYP. MAX UNIT 280 120 MHz 0.1 μs 0.2 μs 0.03 μs Switching times ton Turn-on time tstg Storage time tf Turn-off time IC=-4A ; VCC=-10V IB1=-IB2=-0.2A;RL=2.5Ω hFE-1Classifications Q R S 70-140 100-200 140-280 2 JMnic Product Specification 2SB919 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 JMnic Product Specification 2SB919 Silicon PNP Power Transistors 4