JMNIC 2SB953A

JMnic
Product Specification
2SB953 2SB953A
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・Complement to type 2SD1444/1444A
・High speed switching
・Low collector saturation voltage
APPLICATIONS
・For low-voltage switching
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SB953
VCBO
Collector-base voltage
-20
Open base
2SB953A
VEBO
Emitter-base voltage
V
-50
2SB953
Collector-emitter voltage
UNIT
-40
Open emitter
2SB953A
VCEO
VALUE
V
-40
Open collector
-5
V
IC
Collector current
-7
A
ICM
Collector current-peak
-12
A
PC
Collector power dissipation
Ta=25℃
2
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
1
JMnic
Product Specification
2SB953 2SB953A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO
PARAMETER
Collector-emitter
voltage
CONDITIONS
2SB953
MIN
TYP.
MAX
UNIT
-20
IC=-10mA IB=0
V
-40
2SB953A
VCEsat
Collector-emitter saturation voltage
IC=-5A ;IB=-0.16A
-0.6
V
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-0.16A
-1.5
V
-50
μA
-50
μA
ICBO
Collector
cut-off current
2SB953
VCB=-40V; IE=0
2SB953A
VCB=-50V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
45
hFE-2
DC current gain
IC=-2A ; VCE=-2V
90
Transition frequency
IC=-0.5A; VCE=-10V,f=10MHz
150
MHz
Collector output capacitance
f=1MHz ; VCB=-10V
140
pF
0.1
μs
0.5
μs
0.1
μs
fT
COB
260
Switching times
‹
ton
Trun-on time
ts
Storage time
tf
Fall time
IC=-2A
IB1=-66mA, IB2=66mA
hFE-2 Classifications
Q
P
90-180
130-260
2
JMnic
Product Specification
2SB953 2SB953A
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
JMnic
Product Specification
2SB953 2SB953A
Silicon PNP Power Transistors
4
JMnic
Product Specification
2SB953 2SB953A
Silicon PNP Power Transistors
5