JMnic Product Specification 2SC1106 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High power dissipation ・High breakdown voltage APPLICATIONS ・For voltage regulator ,inverter and switching mode power supply applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 350 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 6 V 2 A 80 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC1106 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 250 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 350 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A 5.0 V VBEsat Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=350V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=0.2A ; VCE=5V 2 MIN 30 TYP. MAX UNIT JMnic Product Specification 2SC1106 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3