JMnic Product Specification 2SC1847 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA886 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute Maximun Ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 1.5 A ICM Collector current-peak 3 A 1.2*1 PC Collector power dissipation TC=25℃ W 5*2 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink JMnic Product Specification 2SC1847 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=2mA;IB=0 40 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 50 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.2A 1.5 V ICBO Collector cut-off current VCB=20V; IE=0 1 μA ICEO Collector cut-off current VCE=10V; IB=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=1A ; VCE=5V COB Output capacitance IE=0 ; VCB=20V;f=1MHz 35 pF fT Transition frequency IC=0.5A ; VCB=5V,f=200MHz 150 MHz CONDITIONS hFE Classifications Q R 80-160 120-220 2 MIN TYP. 80 MAX UNIT 220 JMnic Product Specification 2SC1847 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SC1847 Silicon NPN Power Transistors 4