Product Specification www.jmnic.com 2SC2331 Silicon Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1008 ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・Switching regulators ・DC/DC converters ・High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 2.0 A ICM Collector current-Peak 4.0 A IB Base current 1.0 A PT Total power dissipation Ta=25℃ 1.5 W PT Total power dissipation TC=25℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ 2 Product Specification www.jmnic.com 2SC2331 Silicon Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER CONDITIONS MIN TYP. MAX 100 UNIT Base-emitter sustaining voltage IC=1.0A ,IB=0.1A,L=1mH V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 0.6 V VBEsat Base-emitter saturation voltage IC=1A ;IB=0.1A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 40 hFE-2 DC current gain IC=1A ; VCE=5V 40 200 Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=1.0A IB1=- IB2=0.1A RL=50Ω;VCC≈50V hFE-2 Classifications M L K 40-80 60-120 100-200 3 0.5 μs 1.5 μs 0.5 μs Product Specification www.jmnic.com 2SC2331 Silicon Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 4