JMNIC 2SC2335

JMnic
Product Specification
2SC2335
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・Collector-emitter sustaining voltage
VCEO(sus)=400V(Min)
・Collector-emitter saturation voltage
VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A
・Switching time-tf=1.0μs(Max.)@IC=3.0A
APPLICATIONS
・Designed for use in high-voltage ,highspeed ,power switching in inductive circuit,
particularly suited for 115 and 220V switchmode applications such as switching
regulator’s ,inverters,,DC-DC and converter
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
7
A
ICM
Collector current-peak
15
A
IB
Base current
3.5
A
PD
Total power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-50~150
℃
MAX
UNIT
3.125
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
JMnic
Product Specification
2SC2335
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(SUS)CEO
Collector-emitter sustaining voltage
IC=3.0A ; IB1=0.6A,L=1mH
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.6A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.6A
1.2
V
ICBO
Collector cut-off current
VCB=400V ;IE=0
10
μA
ICEX
Collector cut-off current
VCE=400V ;VBE(off)=-1.5V
TC=125℃
10
5.0
μA
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
20
80
hFE-2
DC current gain
IC=1.0A ; VCE=5V
20
80
hFE-3
DC current gain
IC=3.0A ; VCE=5V
10
400
UNIT
V
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
VCC=150V;IC=3.0A;
IB1=-IB2=600mA;
RL=50Ω
Fall time
hFE-2 Classifications
M
L
K
20-40
30-60
40-80
2
1.0
μs
2.5
μs
1.0
μs
JMnic
Product Specification
2SC2335
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
2SC2335
Silicon NPN Power Transistors
4