JMnic Product Specification 2SC2767 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V 5 A 1.5 A 40 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 3.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case JMnic Product Specification 2SC2767 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 200 V V(BR)CBO Collector-base breakdown voltage IC=100μA ; IE=0 250 V V(BR)EBO Emitter-base breakdown voltage IE=100μA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.8A 0.2 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.8A 1.0 V ICBO Collector cut-off current VCB=250V ;IE=0 10 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=1A ; VCE=5V 20 TYP. MAX UNIT 80 Switching times ton Turn-on time tstg Storage time tf IC=4A; IB1=-IB2=-0.4A RL=20Ω Fall time 2 1.0 μs 2.0 μs 1.0 μs JMnic Product Specification 2SC2767 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SC2767 Silicon NPN Power Transistors 4