JMnic Product Specification 2SC3874 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PL package ・High speed switching ・High VCBO ・Wide area of safe operation APPLICATIONS ・For high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A ICM Collector current-peak 25 A IB Base current 5 A PC Collector power dissipation Ta=25℃ 3.5 TC=25℃ 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SC3874 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=10A ;IB=2A 1.0 V VBEsat Base-emitter saturation voltage IC=10A ;IB=2A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=10A ; VCE=5V 8 Transition frequency IC=1A ; VCE=10V;f=1MHz fT CONDITIONS MIN TYP. MAX 400 UNIT V 20 MHz Switching times ton Turn-on time tstg Storage time tf IC=10A; VCC=150V IB1=2A;IB2=-4A Fall time 2 0.7 μs 2.0 μs 0.3 μs JMnic Product Specification 2SC3874 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50mm) 3 JMnic Product Specification 2SC3874 Silicon NPN Power Transistors 4