JMNIC 2SC4140

JMnic
Product Specification
2SC4140
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High voltage
・High speed switching
APPLICATIONS
・For switching regulator and general
purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current
18
A
ICP
Collector current-pulse
36
A
IB
Base current
6
A
PC
Collector power dissipation
130
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SC4140
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=10A; IB=2A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=10A; IB=2A
1.3
V
ICBO
Collector cut-off current
VCB=500V ;IE=0
100
μA
IEBO
Emitter cut-off current
VEB=10V; IC=0
100
μA
hFE
DC current gain
IC=10A ; VCE=4V
Transition frequency
IE=-2A ; VCE=12V
10
MHz
Collector output capacitance
f=1MHz ; VCB=10V
165
pF
fT
COB
CONDITIONS
MIN
TYP.
MAX
400
UNIT
V
10
30
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=10A;IB1=1A;
IB2=-2A;RL=20Ω
VCC=200V
Fall time
2
1.0
μs
3.0
μs
0.5
μs
JMnic
Product Specification
2SC4140
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
JMnic
Product Specification
2SC4140
Silicon NPN Power Transistors
4