JMNIC 2SC4706

JMnic
Product Specification
2SC4706
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High voltage switching transistor
APPLICATIONS
・For switching regulator and general
purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
900
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
14
A
ICM
Collector current-peak
28
A
IB
Base current
7
A
PC
Collector power dissipation
130
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SC4706
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
ICBO
Collector cut-off current
VCB=800V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE
DC current gain
IC=7A ; VCE=4V
VCE(sat)
Collector-emitter saturation voltage
IC=7A ; IB=1.4A
0.5
V
VBE(sat)
Base-emitter saturation voltage
IC=7A ; IB=1.4A
1.2
V
Transition frequency
VCE=12V;IE=-1.5A
6
MHz
Collector output capacitance
VCB=10V;f=1MHz
160
pF
fT
COB
CONDITIONS
MIN
TYP.
MAX
600
UNIT
V
10
25
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=7A;RL=35.7Ω
IB1=1.05A;IB2=-3.5A
VCC=250V
2
1.0
μs
5.0
μs
0.7
μs
JMnic
Product Specification
2SC4706
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
JMnic
Product Specification
2SC4706
Silicon NPN Power Transistors
4