JMnic Product Specification 2SC5071 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ・High speed switching APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 12 A ICM Collector current-peak 24 A IB Base current 4 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC5071 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.4A 0.5 V VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.4A 1.3 V ICBO Collector cut-off current VCB=500V; IE=0 100 μA IEBO Emitter cut-off current VEB=10V; IC=0 100 μA hFE DC current gain IC=7A ; VCE=4V COB Output capacitance IE=0 ; VCB=10V,f=1MHz 105 pF fT Transition frequency IE=-1A ; VCE=12V 10 MHz 400 UNIT V 10 30 Switching times ton Turn-on time ts Storage time tf Fall time IC=7A;RL=28.5Ω IB1=0.7A; IB2=-1.4A VCC=200V 2 1.0 μs 3.0 μs 0.5 μs JMnic Product Specification 2SC5071 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 JMnic Product Specification 2SC5071 Silicon NPN Power Transistors 4