Product Specification www.jmnic.com 2SD1297 Silicon NPN Transistors B C E Features ・Darlington ・With TO-3PFa package ・Low speed power switching applications Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 5 V IC Collector current-Continuous 25 A PD Total Power Dissipation@TC=25℃ 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TO-3PFa Electrical Characteristics Tc=25℃ SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS IC=100mA; IB=0 MIN 100 MAX UNIT V VCBO Collector-Base Voltage ICEO Collector Cutoff Current ICBO Collector Cutoff Current VCB=100V; IE=0 10 uA IEBO Emitter Cutoff Current VEB=5V; IC=0 5 mA VEBO Emitter-Base Voltage 1.5 V VCE(sat-1) Collector-emitter saturation voltages VCE(sat-2) Collector-emitter saturation voltages hFE-1 Forward current transfer ratio hFE-2 Forward current transfer ratio VBE(sat)1 VBE(sat)2 fT Base-emitter saturation voltages IC=15A; IB=0.03A IC=15A; VCE=2V IC=15A; IB=0.03A Base-emitter saturation voltages Transition frequency JMnic 1000 30000 2.2 V