Product Specification www.jmnic.com 2SD1650 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Built-in damper diode ・High breakdown voltage ・High speed switching APPLICATIONS ・For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL PARAMETER CONDITIONS VALUE UNIT V VCBO Collector-base voltage Open emitter 1500 VCEO Collector-emitter voltage Open base 800 VEBO Emitter-base voltage Open collector 6 V 3.5 A 50 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SD1650 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-emitter sustaining voltage IC=0.1A , IB=0 VCEsat Collector-emitter saturation voltage IC=2.5A ;IB=0.8A VBEsat Emitter-base saturation voltage ICBO MIN TYP. MAX 800 UNIT V 8.0 V IC=2.5A ;IB=0.8A 1.5 V Collector cut-off current VCB=800V; IE=0 10 μA ICES Collector cut-off current VCES=1500V; RBE=∞ 1.0 mA IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA hFE DC current gain IC=0.5A ; VCE=5V 8 fT Transition frequency IC=0.5A ; VCE=10V VF Diode forward voltage IF=3.5A JMnic 5.0 3 MHz 2.0 V Product Specification www.jmnic.com 2SD1650 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic