Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2061 ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 3 A ICM Collector current-Peak 6 A PC Collector power dissipation TC=25℃ 30 W PC Collector power dissipation Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification www.jmnic.com 2SD2061 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-emitter breakdown voltage IC=1mA , IB=0 60 V VCBO Collector-base breakdown voltage IC=50μA , IE=0 80 V VEBO Emitter-base breakdown voltage IE=50μA , IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2A IB=0.2A 1.0 V VBEsat Emitter-base saturation voltage IC=2A IB=0.2A 1.5 V ICBO Collector cut-off current VCB=60V IE=0 10 μA IEBO Emitter cut-off current VEB=4V; IC=0 10 μA hFE DC current gain IC=0.5A ; VCE=5V fT Transition frequency IC=0.5A ; VCE=5V 8 MHz Cob Output capacitance IE=0 ; VCB=10V ,f=1MHz 70 Pf JMnic MIN TYP. 100 MAX UNIT 320 Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2061 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic