Product Specification www.jmnic.com BUW24 Silicon Power Transistors DESCRIPTION ・Short switching time ・High dielectric strength ・With TO-3 package APPLICATIONS ・Suitable for use in clocked voltatge converters PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 350 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 3 A PT Total power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 1.25 K/W Tmb≤25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case JMnic Product Specification www.jmnic.com BUW24 Silicon Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO Collector-emitter breakdown voltage IC=10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=4A IB=0.8A 0.8 V VBEsat Base-emitter saturation voltage IC=4A IB=0.8A 1.5 V ICBO Collector cut-off current VCB=450V IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 hFE-2 DC current gain IC=4A ; VCE=5V 15 350 UNIT V 80 Switching times ton Turn-on time ts Storage time tf Fall time IC=5A IB1=- IB2=0.5A RL=10Ω JMnic 2.0 μs 4.0 μs 1.2 μs Product Specification www.jmnic.com BUW24 Silicon Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions JMnic