SEMICONDUCTOR BAV70T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.9V (Typ.). : trr=1.6ns(Typ.). G H : CT=0.9pF (Typ.). 3 1 SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Continuous Forward Current IF 150 mA IFSM 2 A Power Dissipation PD 200 * mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Maximum (Peak) Reverse Voltage C MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + D E G 0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + DIM A B H 0.50 J _ 0.05 0.13 + J C MAXIMUM RATING (Ta=25℃) CHARACTERISTIC D 2 A FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance 3 1. ANODE 1 Surge Current (10ms) Storage Temperature Range 2. ANODE 2 3. CATHODE 2 1 ESM Note : * Package Mounted On FR-5 Board (25.4×19.05×1.57mm) Marking H2 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.60 - VF(2) IF=10mA - 0.72 - VF(3) IF=150mA - - 1.25 UNIT V Reverse Current IR VR=80V - - 0.5 μA Total Capacitance CT VR=0, f=1MHz - - 3.0 pF Reverse Recovery Time trr IF=10mA - - 4.0 nS 2009. 1. 23 Revision No : 1 1/2 BAV70T IF - VF 10 REVERSE CURRENT I R (µA) 10 FORWARD CURRENT I F (mA) IR - VR 3 2 10 Ta = 10 0 C Ta =2 Ta 5 C =-2 5 C 10 1 10 10 -1 -2 0 0.2 0.4 0.6 0.8 1.0 1.2 Ta=100 C 1 Ta=75 C 10 -1 10 -2 10 -3 Ta=50 C Ta=25 C 0 20 40 t rr - I F TOTAL CAPACITANCE CT (pF) 2.0 REVERSE RECOVERY TIME t rr (ns) C T - VR f=1MHz Ta=25 C 1.6 1.2 0.8 0.4 0.1 0.3 1 3 80 REVERSE VOLTAGE VR (V) FORWARD VOLTAGE V F (V) 0 60 10 30 100 100 Ta=25 C Fig. 1 50 30 10 5 3 1 0.5 0.1 0.3 1 3 10 30 100 FORWARD CURRENT I F (mA) REVERSE VOLTAGE VR (R) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM INPUT 0.01µF DUT WAVEFORM 50Ω -6V 2kΩ 50Ω 0 OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) I F =10mA 0 0.1 I R IR 50ns E t rr PULSE GENERATOR (R OUT =50Ω) 2009. 1. 23 Revision No : 1 2/2