SEMICONDUCTOR E50A2CS, E50A2CR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. A3 A2 A1 D3 FEATURES B1 B2 D2 ・Repetitive Peak Reverse Voltage : VRRM=200V. D1 ・Average Forward Current : IO=50A. E MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VRRM 200 V Average Forward Current IF(AV) 50 A Peak 1 Cycle Surge Current IFSM 600 (50Hz) A Tj -40～190 ℃ Tstg -40～150 ℃ Junction Temperature Storage Temperature Range DIM A1 A2 A3 B1 B2 C1 C2 D1 G F MILLIMETERS _ 0.3 10.0 + _ 0.3 13.5 + _ 0.5 24.0 + _ 0.3 8.5 + _ 0.3 10.0 + _ 0.3 2.0 + _ 0.3 5.0 + _ 0.3 2.5 + DIM D2 D3 E F G H T C2 T E50A2CR (- Type) C1 E50A2CS (+ Type) H POLARITY MILLIMETERS _ 0.3 5.0 + _ 0.3 4.5 + _ 0.3 1.9 + _ 0.3 9.0 + _ 0.3 1.0 + _ 0.5 4.4 + _ 0.3 0.6 + MR ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Peak Forward Voltage VFM IFM=100A - - 1.05 V Repetitive Peak Reverse Current IRRM VRRM=200V - - 50 μA Reverse Recovery Time trr IF=0.1A, IR=0.1A - - 15 μS Temperature Resistance Rth DC total junction to case - - 1.0 ℃/W 2010. 1. 28 Revision No : 0 1/2 I F - VF FORWARD CURRENT I F (A) 1000 100 10 1 0.7 0.8 0.9 1 1.1 FORWARD VOLTAGE V F (V) 2010. 1. 28 Revision No : 0 1.2 AVERAGE FORWARD CURRENT I F(AV) (A) E50A2CS, E50A2CR I F(AV) - Ta 50 Ta=Tc 40 30 20 10 0 0 40 80 120 160 180 200 AMBIENT TEMPERATURE Ta ( C) 2/2