SEMICONDUCTOR KRA110~KRA114 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES C ・With Built-in Bias Resistors. A ・Simplify Circuit Design. ・Reduce a Quantity of Parts and Manufacturing Process. N K E G J D EQUIVALENT CIRCUIT C F 2 3 M 1 C R1 L B H F DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 1. EMITTER 2. COLLECTOR 3. BASE E TO-92 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -100 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range 2009. 2. 25 Revision No : 0 1/4 KRA110~KRA114 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -100 nA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA DC Current Gain hFE VCE=-5V, IC=-1mA 120 - - IC=-10mA, IB=-0.5mA - -0.1 -0.3 V VCE=-10V, IC=-5mA - 250 - MHz KRA110 - 0.2 - KRA111 - 0.065 - - 0.4 - KRA113 - 0.1 - KRA114 - 0.15 - KRA110 - 2.0 - VO=-5V - 1.7 - VIN=-5V - 3.0 - RL=1kΩ - 2.0 - KRA114 - 1.5 - KRA110 - 0.3 - KRA111 - 0.3 - - 1.7 - KRA113 - 0.8 - KRA114 - 1.5 - KRA110 3.29 4.7 6.11 KRA111 7 10 13 70 100 130 KRA113 15.4 22 28.6 KRA114 32.9 47 61.1 Collector-Emitter Saturation Voltage fT * Transition Frequency Rise Time VCE(sat) KRA112 tr KRA111 Switching Storage Time Time KRA112 tstg KRA113 Fall Time Input Resistor KRA112 KRA112 tf R1 - μS kΩ Note : * Characteristic of Transistor Only. 2009. 2. 25 Revision No : 0 2/4 KRA110~KRA114 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) DC CURRENT GAIN h FE 2k h FE - I C KRA110 -2 I C /IB =20 -1 -0.5 -0.3 -0.1 Ta=100 C -0.05 -0.03 Ta=25 C Ta=-25 C -0.01 -0.1 COLLECTOR CURRENT I C (mA) 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) DC CURRENT GAIN h FE 2k -2 1k Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 COLLECTOR CURRENT I C (mA) 2009. 2. 25 Revision No : 0 -10 -30 -100 VCE(sat) - I C I C /I B =20 -1 -0.5 -0.3 -0.1 Ta=100 C -0.05 -0.03 Ta=25 C Ta=-25 C -0.01 -0.1 h FE - I C 500 300 -3 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) -100 COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) DC CURRENT GAIN h FE 2k -1 KRA111 COLLECTOR CURRENT I C (mA) KRA112 -0.3 COLLECTOR CURRENT I C (mA) h FE - I C KRA111 VCE(sat) - I C KRA110 -2 VCE(sat) - I C KRA112 -1 IC /I B =20 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1 Ta=100 C Ta=25 C Ta=-25 C -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) 3/4 KRA110~KRA114 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 2k h FE - I C KRA113 -2 KRA113 I C /I B =20 -1 -0.5 -0.3 -0.1 Ta=100 C -0.05 -0.03 Ta=25 C Ta=-25 C -0.01 -0.1 COLLECTOR CURRENT I C (mA) 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 10 -0.1 VCE =-5V -0.3 -1 -3 -10 -30 COLLECTOR CURRENT I C (mA) 2009. 2. 25 Revision No : 0 -100 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 2k -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) h FE - I C KRA114 VCE(sat) - I C -2 -1 KRA114 VCE(sat) - I C I C /I B =20 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1 Ta=100 C Ta=25 C Ta=-25 C -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) 4/4