SEMICONDUCTOR KTC3572 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capability : IC and ICP. B D A Higher Efficiency Leading to Less Heat Generation. MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT C Collector-Base Voltage VCBO 120 V Q Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V DC IC 1 Pulse ICP 3 Base Current IB 300 mA Collector Power Dissipation PC 1 W Junction Temperature Tj 150 Tstg -55 150 S G CHARACTERISTIC P DEPTH:0.2 ) Storage Temperature Range R J F F H E M 1 N 2 H 3 H N L MILLIMETERS 7.20 MAX 5.20 MAX 0.60 MAX 2.50 MAX E F G H J K L M 1.15 MAX 1.27 1.70 MAX 0.55 MAX _ 0.50 14.00 + 0.35 MIN _ 0.10 0.75 + 4 N O 25 1.25 Φ1.50 0.10 MAX _ 0.50 12.50 + 1.00 P Q R S M D A H O Collector Current K DIM A B C D 1. EMITTER 2. COLLECTOR 3. BASE TO-92L ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=100 A 120 - - V Collector-Emitter Breakdown Voltage ** V(BR)CEO IC=1mA 100 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=100 A 5 - - V Collector Cut-Off Current ICBO VCB=80V - - 100 nA Emitter Cut-Off Current IEBO VEB=4V, IC=0A - - 100 nA Collector-Emitter Cut-Off Current ICES VCES=80V, VBE=0V - - 100 nA VCE(sat) (1) IC=100mA, IB=10mA - - 0.04 VCE(sat) (2) IC=500mA, IB=50mA - - 0.12 VCE(sat) (3) IC=1A, IB=100mA - - 0.2 VBE(sat) IC=1A, IB=100mA - - 1.05 V VBE VCE=10V, IC=1A - - 0.9 V Collector-Emitter Saturation Voltage ** Base-Emitter Saturation Voltage ** Base-Emitter Voltag DC Current Gain ** hFE(1) VCE=10V, IC=1mA 150 - - hFE(2) VCE=10V, IC=250mA 150 - 500 hFE(3) VCE=10V, IC=500mA 100 - - hFE(4) VCE=10V, IC=1A 80 - - VCE=10V, IC=50mA, f=100MHz 100 - - MHz - 9.5 - pF fT Transition Frequency Collector Output Capacitance V Cob VCB=10V, f=1MHz ** Pulse Width = 300 S, Duty Cycle 2%. 2010. 6. 4 Revision No : 0 1/3 KTC3572 VCE(sat) - I C 1 IC/IB=10 Ta=100 C 10-1 Ta=25 C Ta=-55 C 10-2 10-1 1 10 102 103 104 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - I C 10 IC/IB=50 Ta=25 C 1 10-1 10-2 10-1 1 10 DC CURRENT GAIN h FE Ta=-55 C Ta=25 C 0.4 Ta=100 C 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 600 VCE=10V 0 -10-1 -1 -10 -102 -103 Ta=25 C 200 Ta=-55 C -1 -10 -102 -103 COLLECTOR CURRENT I C (mA) VBE(sat) - I C I C - VCE 2 1 10 102 103 COLLECTOR CURRENT I C (mA) 2010. 6. 4 Ta=100 C 400 COLLECTOR CURRENT I C (mA) IC/IB=20 Ta=25 C 10-1 VCE=10V 0 -10-1 -104 1 10-1 Revision No : 0 104 h FE - I C COLLECTOR CURRENT IC (A) BASE-EMITTER VOLTAGE VBE (V) VBE - I C 0.8 103 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 1.2 102 104 -104 IB=3150µA IB=3500µA IB=2800µA 1.6 IB=2450µA Ta=25 C IB=1400µA 1.2 IB=2100µA 0.8 IB=1750µA IB=1050µA IB=700µA IB=350µA 0.4 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) 2/3 KTC3572 COLLECTOR CURRENT I C (mA) SAFE OPERATING AREA 10 IC MAX(PULSE)* 1 100mS 10mS* IC MAX(CONTINUOUS) 1mS* DC OPERATION(Ta=25 C) 0.1 0.01 *SINGLE NONREPETTTTVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.001 0.1 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE VCE (V) 2010. 6. 4 Revision No : 0 3/3