SEMICONDUCTOR KTC9015A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity : hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). ・Low Noise :NF=1dB(Typ.) at f=1kHz. N K ・Complementary to KTC9014A. E G J D MAXIMUM RATING (Ta=25℃) UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -150 mA Emitter Current IE 150 mA Collector Power Dissipation PC 400 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range F 1 2 3 C RATING MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M SYMBOL L CHARACTERISTIC H F DIM A B C D E F G H J K L M N 1. EMITTER 2. BASE 3. COLLECTOR TO-92 (F) ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -50 nA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA 60 - 600 - -0.1 -0.3 V 60 - - MHz hFE (Note) DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) fT Transition Frequency VCE=-5V, IC=-1mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA, f=100MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 4.0 7.0 pF Noise Figure NF VCE=-6V, IC=-0.1mA, Rg=10kΩ, f=1kHz - 1.0 10 dB Note : hFE Classification A:60～150, 2010. 1. 28 B:100～300, Revision No : 2 C:200～600 1/1