SEMICONDUCTOR PG03DBTFC TECHNICAL DATA TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. CATHODE MARK FEATURES 1 C 2 D Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) B IEC 61000-4-5(Lightning) 5A(tp=8/20 s) A DIM A B C D E F Bidirectional Type Pin Configuration Structure. Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. MILLIMETERS _ 0.05 1.00 + 0.80+0.10/-0.05 _ 0.05 0.60 + _ 0.05 0.30 + 0.40 MAX _ 0.05 0.13 + Protects one I/O or power line. E F Low clamping voltage. Low leakage current. 1. ANODE 2. ANODE APPLICATIONS Cell phone handsets and accessories. TFSC Cordless phone Personal digital assistants (PDA’s) Notebooks, desktops, & servers. Portable instrumentation. Marking CHARACTERISTIC 2 ) SYMBOL RATING UNIT PPK 50 W Junction Temperature Tj -55 150 Storage Temperature Tstg -55 150 Peak Pulse Power (tp=8/20 s) ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage 2 1 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 3.3 V 4.2 - 6.2 V VBR Reverse Breakdown Voltage 1 T MAXIMUM RATING (Ta=25 It=1mA Reverse Leakage Current IR VRWM=3.3V - - 20 A Clamping Voltage VC IPP=5A, tp=8/20 s - - 17 V Junction Capacitance CJ VR=0V, f=1MHz - - 25 pF 2005. 6. 8 Revision No : 0 1/1