SEMICONDUCTOR PG05FSUL2 TECHNICAL DATA Single Line TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. FEATURES 100 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 10A(tp=8/20 s) Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. (* Multi-Layer Varistors [0402 Size]) Protects on I/O or power line. Low clamping voltage. Low leakage current. APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Peak Pulse Power (tp=8/20 s) PPK 100 W Peak Pulse Current (tp=8/20 s) IPP 10 A Junction Temperature Tj -55 150 Storage Temperature Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 5 V It=1mA 6 - - V VRWM=3V - - 0.1 VRWM=5V - - 5 IF=10mA - 0.8 - IPP=5A, tp=8/20 s - - 9.8 IPP=10A, tp=8/20 s - - 10.0 VR=0V, f=1MHz - - 80 VBR Reverse Breakdown Voltage IR Reverse Leakage Current Forward Current VF Clamping Voltage VC CJ Junction Capacitance 2008. 3. 25 Revision No : 1 A V V pF 1/2 PG05FSUL2 2008. 3. 25 Revision No : 1 2/2