KEC PV1015UDF12B

SEMICONDUCTOR
PV1015UDF12B
TECHNICAL DATA
ESD/EMI Filtering
APPLICATION
・I/O ESD protection for mobile handsets, notebook, PDAs, etc.
C
A
・EMI filtering for data ports in cell phones, PDAs, notebook computers
E
1
6
G
・EMI filtering for LCD, camera and chip-to-chip data lines
GND PAD
B
F
H
Pin 1
FEATURES
12
・EMI/RFI filtering
D
TOP VIEW
・ESD Protection to IEC 61000-4-2 Level 4
7
BOTTOM VIEW
・Low insertion loss
・Good attenuation of high frequency signals
DIM
A
B
C
D
E
F
G
H
J
K
L
K L
J
・Low clamping voltage
・Low operating and leakage current
・Six elements in one package
SIDE VIEW
1,12 : Filter channel 1
2,11 : Filter channel 2
3,10 : Filter channel 3
4,9 : Filter channel 4
5,8 : Filter channel 5
6,7 : Filter channel 6
DESCRIPTION
PV1015UDF12B is an EMI filter array with electrostatic discharge (ESD) protection,
which integrates six pi filters (C-R-C). These parts include ESD protection diodes on
every pin, providing a very high level of protection for sensitive electronic components
MILLIMETERS
_ 0.10
2.50 +
_ 0.10
1.35 +
_ 0.10
2.00 +
_ 0.05
0.20 +
0.40
_ 0.10
0.40 +
_ 0.10
0.25 +
0.20 Min
_ 0.05
0.50 +
0.127
0.02+0.03/-0.02
that may be subjected to electrostatic discharge.
UDFN-12B
The PV1015UDF12B provides the recommended line termination while implementing a
low pass filter to limit EMI levels and providing ESD protection which exceeds IEC
61000-4-2 level 4 standard. The UDFN package is a very effective PCB space
MARKING
occupation and a very thin package (0.4mm Pitch, 0.5mm height)
Type Name
MAXIMUM RATING (Ta=25℃)
SYMBOL
RATING
PR
100
*PD
600
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
-55～150
℃
DC Power Per Resistor
Power Dissipation
V3
UNIT
0 A
CHARACTERISTIC
mW
Lot No.
RECOMMENEDED FOOTPRINT
(dimensions in mm)
* Total Package Power Dissipation
0.40
0.30
100Ω
FILTERn*
1.66
0.55
EQUIVALENT CIRCUIT
FILTERn*
15pF
15pF
0.25
1.40
GND
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
SYMBOL
TEST CONDITION
VRWM
VBR
-
MIN.
TYP.
MAX.
UNIT
-
-
5
V
It=1mA
6
-
-
V
VRWM=3.3V
-
-
1.0
μA
Cutoff Frequency
fc-3dB
VLine=0V, ZSOURCE=50Ω, ZLOAD=50Ω
-
110
-
MHz
Channel Resistance
RLINE
Between Input and Output
80
100
120
Ω
VLine=0V DC, 1MHz, Between I/O Pins and GND
36
45
54
VLine=2.5V, 1MHz, Between I/O Pins and GND
24
30
36
Reverse Leakage Current
Capacitance
2009. 6. 3
IR
CLINE
Revision No : 2
pF
1/2
PV1015UDF12B
ANALOG CROSSTALK
S21 - FREQUENCY
0
CROSSTALK (dB)
INSERTION LOSS (dB)
0
-10
-20
-30
-40
1
10
100
1000
-30
-60
-90
-120
-150
6000
1
10
FREQUENCY (MHz)
6000
RLine - TEMPERATURE
2.0
110
108
RESISTANCE R (Ω)
NORMALIZED CAPACITANCE
1000
FREQUENCY (MHz)
DIODE CAPACITANCE vs. INPUT VOLTAGE
1.5
1.0
0.5
106
104
102
100
98
96
94
92
0.0
0
1
2
3
DIODE VOLTAGE (V)
2009. 6. 3
100
Revision No : 2
4
5
90
-40
-20
0
20
40
60
80
AMBIENT TEMPERATURE Ta ( C )
2/2