Diodes SMD Type Schottky Barrier Diodes 1N5817WS-1N5819WS SOD-323 Unit: mm +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 Features For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. +0.1 2.6-0.1 1.0max 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Parameter Symbol 1N5817WS 1N5818WS 1N5819WS Unit 20 30 40 V 20 30 40 V 14 21 28 V Non-Repetitive Peak reverse voltage VRM Peak repetitive Peak reverse voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) IO 1 Peak forward surge current @=8.3ms IFSM 25 A Repetitive Peak Forward Current IFRM 625 mA Pd 250 mW 500 K/W Average Rectified Output Current Power Dissipation Thermal Resistance Junction to Ambient R Storage temperature TSTG JA A -65 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons 1N5817WS Reverse breakdown voltage 1N5818WS Reverse voltage leakage current V(BR) 1N5818WS IR VF 1N5819WS Diode capacitance Max IR= 1mA Unit V 30 40 1N5817WS Forward voltage Typ 20 1N5819WS 1N5817WS 1N5818WS 1N5819WS Min CD VR=20V VR=30V VR=40V IF=1A IF=3A IF=1A IF=3A IF=1A IF=3A VR=4V, f=1MHz 1 0.45 0.75 0.55 0.875 0.6 0.9 120 mA V V V pF Marking NO. 1N5817WS 1N5818WS 1N5819WS Marking SJ SK SL www.kexin.com.cn 1 Diodes SMD Type 1N5817WS-1N5819WS Typical Characteristics Fig.1 Forward Current Derating Curve Fig.2 Maximum Non-Repetitive Peak Forward Surge Current Fig.3 Typical Instantaneous Forward Characteristics Fig.5 Typical Junction Capacitance 2 www.kexin.com.cn Fig.4 Typical Reverse Characteristics Fig.6 Typical Transient Thermal Impedance