KEXIN 1SS350

Diodes
SMD Type
Sillicon Epitaxial Schottky Barrier Diode
1SS350
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
High breakdown voltage (VR=55V).
1
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Very small-sized package permitting the 1SS350-applied sets to be made small and slim.
0.55
Low forward voltage (VF=0.23V max).
+0.1
1.3-0.1
+0.1
2.4-0.1
Small interterminal capacitance (C=0.69pF typ).
1.Base
2.Emitter
3.collector
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r
S ym bol
V a lu e
U n it
R e v e r s e V o lt a g e
VR
5
V
F o rw a rd C u rre n t
IF
30
mA
J u n c t io n T e m p e r a t u r e
Tj
125
S to ra g e te m p e ra tu re
T s tg
-5 5 to + 1 2 5
Electrical Characteristics Ta = 25
Param eter
Forward Voltage
Sym bol
Conditions
VF
IF = 1 m A
Forward Current
IF
V F = 0.5 V
Reverse Current
IR
V R = 0.5 V
Interterm inal Capacitance
C
V R = 0.2 V, f = 1 MHz
Min
Typ
Max
Unit
0.23
V
30
mA
0.69
25
A
0.9
pF
Marking
Marking
BH
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