Diodes SMD Type Silicon Epitaxial Planar Diode 1SV287 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C2V/C25V = 7.6(Typ.) Low Series Resistance:rs = 1.9 +0.1 2.6-0.1 1.0max (Typ.) 0.475 Excellent C-V Characteristics,and Small Tracking Error. +0.05 0.1-0.02 Useful for small size Tuner. 0.375 Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit VR 30 V Reverse Voltage Peak Reverse Voltage V RM Junction Temperature Tj 125 T stg -55 to +125 Storage Temperature Range 35(R L = 10 K ) V Electrical C haracteristics T a = 25 P aram eter S ym bol Conditions M in 30 Typ M ax Unit 10 nA V Reverse V oltage VR IR = 1 Reverse Current IR V R = 28 V C 2V f = 1 M Hz;V R = 2 V 4.2 5.7 C 25V f = 1 M Hz;V R = 25 V 0.53 0.68 Capacitance Capacitance Ratio C 2V /C 25V S eries Resistance rs A pF 7.3 V R = 1V , f = 470 M Hz 1.9 2.3 Note : A vailable in m atched group for capacitance to 6% . C(M ax.)-C(M in.) 0.06 C(M in.) (V R =2~25V ) Marking Marking TK www.kexin.com.cn 1