MOSFET SMD Type N-Channel Enhanceent Mode Field Effect Transistor 2N7002K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Low Input Capacitance 0.55 Low Gate Threshold Voltage +0.1 1.3-0.1 +0.1 2.4-0.1 Low On-Resistance: RDS(ON) 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Switching Speed +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low Input/Output Leakage 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta=25 Parameter Symbol Rating Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS Drain Current -Continuous ID Drain Current -Pulsed Power Dissipation PD Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range R V 20 JA Tj, TSTG 300 mA 800 mA 350 mW 357 W -65 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain-Source Breakdown Voltage VDSS VGS = 0V, ID = 10 Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V IGSS VGS = Gate-Body Leakage Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS (ON) A Min 10 1.0 VGS = 10V, ID = 0.5A |Yfs| Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 10V, VDS = 0.2V VDS = 25V, VGS = 0V,f = 1.0MHz Unit V 20V, VDS = 0V VDS = 10V, ID = 1mA Max 1.0 1.6 2.5 A A V 2.0 VGS = 5V, ID = 0.05A Forward Transfer Admittance Typ 60 3.0 80 ms 50 pF 25 pF 5.0 pF Marking Marking K7K www.kexin.com.cn 1