KEXIN 2PB710AS

Transistors
IC
SMD Type
PNP General Purpose Transistor
2PB710A
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
1
0.55
Low voltage (max. 50 V).
+0.1
1.3-0.1
+0.1
2.4-0.1
High current (max. 500 mA)
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-60
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
Collector current (DC)
IC
-500
mA
Peak collector current
ICM
-1
A
Peak base current
IBM
-200
mA
Total power dissipation Tamb 25 ; *
Ptot
250
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Tamb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
* Transistor mounted on an FR4 printed-circuit board.
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1
Transistors
IC
SMD Type
2PB710A
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Testconditons
IE = 0; VCB = -60 V
IE
DC current gain
= 0; VCB = -60 V; Tj = 150
IC = 0; VEB = -5 V
2PB710AQ
2PB710AR
hFE
IC = -150 mA; VCE = -10 V*
2PB710AS
IC = -500 mA; VCE = -10 V; *
DC current gain
Typ
Max
Unit
-10
nA
-5
ìA
-10
nA
85
170
120
240
170
340
40
Collector-emitter saturation voltage
VCEsat
IC = -300 mA; IB = -30 mA *
-600
mV
Base-emitter saturation voltage
VBEsat
IC = -300 mA; IB = -30 mA *
-1.5
V
Cc
IE = ie = 0; VCB = -10 V; f = 1 MHz
15
pF
fT
IC = -50 mA; VCE = -10 V; f = 100 MHz*
Collector capacitance
Transition frequency
2PB710AQ
2PB710AR
100
2PB710AS
*. Pulse test: tp
300 ìs; ä
0.02.
Type Number
2PB710AQ
2PB710AR
2PB710AS
Marking
DQ
DR
DS
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120
140
Marking
2
Min
MHz