Transistors SMD Type NPN General Purpose Transistor 2PD601AW Features High collector current (max. 100 mA) Low collector-emitter saturation voltage (max. 500 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 100 mA Peak collector current ICM 200 mA Total power dissipation Ptot 200 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Tamb -65 to +150 Thermal resistance from junction to ambient Rth j-a 625 K/W www.kexin.com.cn 1 Transistors SMD Type 2PD601AW Electrical Characteristics Ta = 25 Parameter Symbol Testconditons IE = 0; VCB = 60 V Typ Max Unit 10 nA Collector cut-off current ICBO IE = 0; VCB = 60 V; Tj = 150 5 ìA Emitter cut-off current IEBO IC = 0; VEB = 5 V 10 nA DC current gain 2PD601AQW 2PD601ARW 2PD601ASW hFE IC = 2 mA; VCE = 10 V Collector capacitance Cc IE = ie = 0; VCB = 10 V; f = 1 MHz Transition frequency 2PD601AQW 2PD601ARW 2PD601ASW fT IC = 2 mA; VCE = 10 V;f = 100 MHz * Pulse test: tp 300 ìs; ä 0.02. hFE Classification TYPE 2PD601AQW Marking 6D www.kesenes.com 160 210 290 VCE(sat) IC = 100 mA; IB = 10 mA; * Collector-emitter saturation voltage 2 Min 2PD601ARW 2PD601ASW 6E 6F 100 120 140 260 340 460 500 mV 3.5 pF MHz