Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SA1034 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High forward current transfer ratio hFE. 0.55 Low noise voltage NV. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Mini type package, allowing downsizing of the equipment and automatic +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 insertion through the tape packing and the magazine packing. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -35 V Emitter-base voltage VEBO -5 V Collector current IC -50 mA Peak collector current ICP -100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = -10 ìA, IE = 0 -35 V Collector-emitter voltage VCEO IC = -2 mA, IB = 0 -35 V -5 Emitter-base voltage VEBO IE = -10 ìA, IC = 0 Base-emitter voltage * VBE VCE = -1 V, IC = -100 mA Collector-base cutoff current ICBO VCB = -10 V, IE = 0 Collector-emitter cutoff current ICEO VCE = -10 V, IB = 0 Forward current transfer ratio hFE VCE = -5 V, IC = -2 mA Collector-emitter saturation voltage * V -0.7 180 fT Noise voltage VCB = -5 V, IE = 2 mA, f = 200 MHz VCE = -10 V, IC = -1 mA, GV = 80 dB NV V -0.1 ìA -1 ìA 700 VCE(sat) IC = -100 mA, IB = -10 mA Transition frequency -1.0 -0.6 200 V MHz 150 mV Rg = 100 kÙ, Function = FLAT * Pulse measurement. hFE Classification Marking FR FS FT hFE 180 360 260 520 360 700 www.kexin.com.cn 1