KEXIN 2SA1121

Transistors
IC
SMD Type
Silicon PNP Epitaxial
2SA1121
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
Low frequency amplifier
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector to base voltage
Parameter
VCBO
-35
V
Collector to emitter voltage
VCEO
-35
V
Emitter to base voltage
VEBO
-4
V
Collector current
IC
-500
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector to base breakdown voltage
V(BR)CBO IC = -10 mA, IE = 0
-35
V
Collector to emitter breakdown voltage
V(BR)CEO IC = -1 mA, RBE =
-35
V
Emitter to base breakdown voltage
V(BR)EBO IE = -10 mA, IC = 0
-4
Collector cutoff current
ICBO
VCE(sat) IC = -150 mA, IB = -15 mA
Collector to emitter saturation voltage
V
VCB = -20 V, IE = 0
DC current transfer ratio
hFE
VCE = -3 V, IC = -10 mA
Base to emitter voltage
VBE
VCE = -3 V, IC = -10 mA
-0.2
60
-0.5
ìA
-0.6
V
320
-0.64
V
hFE Classification
Marking
SB
SC
SD
hFE
60 120
100 200
160 320
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