Transistors SMD Type Silicon PNP Epitaxial Type 2SA1163 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 High hFE. 0.55 Small package. +0.1 1.3-0.1 +0.1 2.4-0.1 High voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Low noise. 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V IC -100 mA Collector current Base current IB -20 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cut-off current ICBO VCB = -120 V, IE = 0 Emitter cut-off current IEBO VEB = -5 V, IC = 0 DC current gain hFE VCE = -6 V, IC = -2 mA Collector-emitter saturation voltage Min Typ 200 Transition frequency fT VCE = -6 V, IC = -1 mA Cob VCB = -10 V, IE = 0, f = 1 MHz Noise figure NF VCB=-6 V, IC=-0.1 mA, f=1 kHz,Rg=10 kÙ Unit -0.1 ìA -0.1 ìA 700 VCE (sat) IC = -10 mA, IB = -1 mA Collector output capacitance Max -0.3 V 100 MHz 4 pF 1.0 10 dB hFE Classification Marking CG CL Rank GR BL hFE 200 400 350 700 www.kexin.com.cn 1