KEXIN 2SA1313

Transistors
IC
SMD Type
Silicon PNP Epitaxial
2SA1313
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
Small package
1
0.55
High voltage: VCEO = -50 V (min)
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
IC
-500
mA
Collector current
Base current
IB
-50
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cut-off current
ICBO
VCB = -50 V, IE = 0
-0.1
ìA
Emitter cut-off current
IEBO
VEB = -5 V, IC = 0
-0.1
ìA
DC current gain
hFE
VCE = -1 V, IC = -100 mA
VCE (sat) IC = -100 mA, IB = -10 mA
70
240
-0.1
-0.25
V
Base-emitter voltage
VBE
VCE = -1 V, IC = -100 mA
-0.8
-1
V
Transition frequency
fT
VCE = -6 V, IC = -20 mA
200
MHz
VCB = -6 V, IE = 0, f = 1 MHz
13
pF
Collector-emitter saturation voltage
Collector output capacitance
Cob
hFE Classification
AC
Marking
Rank
hFE
O
70
140
Y
120
240
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