KEXIN 2SA1330

Transistors
SMD Type
PNP Silicon Epitaxial Transistor
2SA1330
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
High DC current gain.
0.4
3
1
0.55
High voltage.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-200
V
Collector-emitter voltage
VCEO
-200
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-100
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
SMD Type
2SA1330
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = -200V, IE=0
-100
nA
Emitter cutoff current
IEBO
VEB = -5V, IC=0
-100
nA
DC current gain *
hFE
Base-emitter voltage *
VBE
Min
Typ
VCE = -10V , IC = -10mA
90
200
VCE = -10V , IC = -50mA
50
195
450
VCE = -10V , IC = -10mA
-0.6
-0.65
-0.7
V
Collector-emitter saturation voltage *
VCE(sat) IC = -50mA , IB = -5mA
-0.21
-0.3
V
Base saturation voltage *
VBE(sat) IC = -50mA , IB = -5mA
-0.8
-1.2
V
VCE = -10V , IE = 10mA
120
MHz
Gain bandwidth product
fT
Output capacitance
Cob
VCB = -30V , IE = 0 , f = 1.0MHz
3.6
pF
Turn-on time
ton
IC = -10mA, IB1 = -IB2 = -1mA,
0.16
ìs
Storage time
tstg
VCC = -10 V
1.3
ìs
VBE(off) = 2.5V
0.18
ìs
Fall time
* Pulse test: tp
tf
350 ìs; d
0.02.
hFE Classification
2
Testconditons
Marking
O5
O6
O7
hFE
90 180
135 270
200 450
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