Transistors SMD Type Medium Power Transistor 2SB1189 Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -80 V Collector-emitter Voltage VCEO -80 V Emitter-base Voltage VEBO -5 V Collector current IC -0.7 A Collector power dissipation PC 0.5 W Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltae BVCBO IC = -50 A -80 V Collector-emitter breakdown voltage BVCEO IC = -2mA -80 V Emitter-base breakdown voltage BVEBO IE = -50 A -5 V Collector cutoff current ICBO VCB = -50V -0.5 ìA Emitter cutoff current IEBO VEB = -4V -0.5 ìA -0.4 V VCE(sat) IC = -500mA , IB = -50mA Collector-Emitter Saturation Voltage DC current transfer ratio VCE = -3V , IC = -0.1A hFE Transition frequency fT Output Capacitance Cob -0.2 82 390 VCE = -10V , IE = 50mA , f = 100MHz 100 VCB = -10V , IE = 0, f = 1MHz 14 MHz 20 pF hFE Classification BD Marking Rank P Q R hFE 82 180 120 270 180 390 www.kexin.com.cn 1