KEXIN 2SB1215

Transistors
SMD Type
Strobe High-Current Switching Applications
2SB1215
TO-252
6.50
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
Low collector-to-emitter saturation voltage.
+0.1
0.60-0.1
2.3
+0.15
4.60-0.15
0.127
max
3 .8 0
+0.15
5.55 -0.15
+0.1
0.80-0.1
+0.25
2.65 -0.1
Fast switching time.
+0.28
1.50 -0.1
+0.2
9.70 -0.2
High fT.
+0.15
0.50 -0.15
Excllent linearity of hFE.
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-120
V
Collector-emitter voltage
VCEO
-100
V
Emitter-base voltage
VEBO
-6
V
Collector current
IC
-3
A
Collector current (pulse)
ICP
-6
A
1
W
20
W
Collector dissipation
PC
TC = 25
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
SMD Type
2SB1215
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = -100V , IE = 0
-1
ìA
Emitter cutoff current
IEBO
VEB = -4V , IC = 0
-1
ìA
DC current Gain
hFE
Gain bandwidth product
Output capacitance
VCE = -5V , IC = -0.5A
70
VCE = -5V , IC = -2A
40
400
fT
VCE = -10V , IC = -0.5A
130
MHz
Cob
VCB = -10V , f = 1MHz
40
pF
Collector-emitter saturation voltage
VCE(sat) IC = -1.5A , IB = -0.15A
-200
-500
mV
Base-to-emitter saturation voltage
VBE(sat) IC = -1.5A , IB = -0.15A
-0.9
-1.2
V
Collector-to-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-120
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-100
V
Emitter-to-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
-6
V
Turn-on time
ton
100
ns
Storage time
tstg
800
ns
tf
50
ns
Fall time
hFE Classification
2
Min
Rank
Q
R
S
T
hFE
70 140
100 200
140 280
200 400
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