Transistors SMD Type Power Transistor 2SB1308 Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V IC -3 A ICP * -5 A W Collector current Collector current(Pulse) Collector power dissipation PC 0.5 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Single pulse, Pw=10ms Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=-50ìA -30 V Collector-emitter breakdown voltage BVCEO IC=-1mA -20 V Emitter-base breakdown voltage -6 BVEBO IE=-50ìA Collector cutoff current ICBO VCB=-20V Emitter cutoff current IEBO VEB=-5V Collector-emitter saturation voltage hFE VCE=-2V, IC=-0.5A V 82 Transition frequency Cob Output capacitance fT ìA -0.5 ìA 390 VCE(sat) IC=-1.5A,IB=-0.15A DC current transfer ratio -0.5 -0.45 V VCE=-6V, IE=50mA, f=100MHz 120 MHz VCB=-20V, IE=0A, f=1MHz 60 pF hFE Classification BF Marking Rank P Q R hFE 82 180 120 270 180 390 www.kexin.com.cn 1