Transistors SMD Type Low Frequency Transistor 2SB1412 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 PNP silicon transistor. +0.15 0.50 -0.15 Low VCE(sat). 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V -5 A(DC) -10 A (Pulse)* Collector current IC Collector current pulse ICP -10 A Collector power dissipation PC 1 W PC 10 W (Tc=25 ) Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Single pulse ,PW=10ms Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=-50ìA -30 V Collector-emitter breakdown voltage BVCEO IC=-1mA -20 V Emitter-base breakdown voltage BVEBO IE=-50ìA -6 V ICBO VCB=-20V IEBO VEB=-5V Collector cutoff current Emitter cutoff current VCE(sat) IC= -4A, IB= -0.1A Collector-emitter saturation voltage DC current transfer ratio hFE Output capacitance fT Transition frequency Cob VCE= -2V, IC= -0.5A -0.35 82 -0.5 ìA -0.5 ìA -1.0 V 390 VCE= -6V, IE=50mA, f=100MHz 120 MHz VCB= -20V,IE=0A,f=1MHz 60 pF hFE Classification Rank P Q R hFE 82 180 120 270 180 390 www.kexin.com.cn 1