KEXIN 2SB1440

Transistors
SMD Type
Silicon PNP Epitaxial Planar Type
2SB1440
Features
Low collector to emitter saturation voltage VCE(sat).
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
Peak collector current
ICP
-3
A
Collector current
IC
-2
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
VCBO
IC = -10 ìA, IE = 0
-50
V
Collector-emitter voltage
VCEO
IC = -1 mA, IB = 0
-50
V
Emitter-base voltage
VEBO
IE = -10 ìA, IC = 0
Forward current transfer ratio
hFE
VCE = -2 V, IC = -200 mA
-5
V
120
340
Collector-emitter saturation voltage
VCE(sat) IC = -1 A, IB = - 50 mA
-0.2
-0.3
Base-emitter saturation voltage
VBE(sat) IC = -1 A, IB = - 50 mA
-0.85
-1.2
Transition frequency
fT
Collector output capacitance
Cob
VCB = -10 V, IE = 50 mA, f = 200 MHz
80
VCB = -10 V, IE = 0, f = 1 MHz
45
V
MHz
60
pF
hFE Classification
1I
Marking
Rank
R
S
hFE
120 240
170 340
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