Transistors IC SMD Type Power Transistor 2SB1443 Features Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V IC -2 A ICP *1 -5 A W Collector current Collector dissipation PC*2 1 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *1 Single pulse Pw=10ms. *2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltae VCBO IC= -50ìA -50 V Collector-emitter breakdown voltage VCEO IC= -1mA -50 V Emitter-base breakdown voltage VEBO IE= -50ìA -6 V Collector cutoff current IcBO VCB= -50V Emitter cutoff current IEBO VEB= -5V DC current gain hFE VCE=-2V, IC= -0.5A Collector-emitter saturation voltage VCE(sat) IC/IB= -1A/ -50mA Output capacitance Cob Transition frequency fT 120 -0.1 A -0.1 A 270 -0.15 -0.35 V VCB= -10V, IE=0A, f=1MHz 36 pF VCE= -2V, IE=0.5A, f=100MHz 200 MHz www.kexin.com.cn 1