Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB710 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 insertion through the tape packing and the magazine packing. 0.55 Mini type package, allowing downsizing of the equipment and automatic +0.1 1.3-0.1 +0.1 2.4-0.1 Large collector current IC. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -5 V Collector current IC -0.5 A Peak collector current ICP -1 A Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = -10 ìA, IE = 0 -30 V Collector-emitter voltage VCEO IC = -10 mA, IB = 0 -25 V Emitter-base voltage VEBO IE = -10 ìA, IC = 0 -5 Collector-base cutoff current ICBO VCB = -20 V, IE = 0 hFE VCE = -10 V, IC = -150 mA Forward current transfer ratio V -0.1 85 ìA 340 Collector-emitter saturation voltage VCE(sat) IC = -300 mA, IB = -30 mA -0.35 -0.6 V Base-emitter saturation voltage VBE(sat) IC = -300 mA, IB = -30 mA -1.1 -1.5 V Transition frequency VCB = -10 V, IE = 50 mA , f = 200 MHz fT Collector output capacitance VCB = -10V , IE = 0 , f = 1.0MHz Cob 200 6 MHz 15 pF hFE Classification Marking CQ CR CS hFE 85 170 120 240 170 340 www.kexin.com.cn 1