Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB798 Features World standard miniature package:SOT-89 Low collector saturation voltage:VCE(sat)<-0.4V(IC=-1.0A,IB=-100mA) Excellent DC Current Gain Linearity:hFE=100TYP.(VCE=-10.V,IC=-1.0A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -30 V Collector to emitter voltage VCEO -25 V Emitter to base voltage VEBO -5 V Collector current IC -1 A Collector current(Pulse) * IC 1.5 A Total power dissipation PT 2 W Tj 150 Tstg -55 to +150 Junction temperature Storage temperature range * PW 10ms,duty cycle 50%. Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = -30 V, IE = 0 Testconditons -100 nA Emitter cutoff current IEBO VEB = -5.0 V, IC = 0 -100 nA DC current gain * hFE VCE = -1.0 V, IC = -100 mA 90 200 50 100 VCE(sat) IC = -1A, IB = -0.1A Base saturation voltage * VBE(sat) IC = -1A, IB = -0.1A Gain bandwidth product Output capacitance * Pulsed: PW -0.25 400 -0.4 V -1.0 -1.2 V -640 -700 mV VBE VCE = -6.0 V, IC = -10 mA fT VCE = -6.0 V, IE = 10 mA 110 MHz VCB = -6.0 V, IE = 0 , f = 1.0 MHz 36 pF Cob 350 ìs, duty cycle Typ VCE = -1.0 V, IC = -1.0A Collector saturation voltage * Base-emitter voltage * Min -600 2% hFE Classification Marking DM DL DK hFE 90 180 135 270 200 400 www.kexin.com.cn 1