Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB800 Features World standard miniature package:SOT-89 High collector to emitter voltage:VCEO -80V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -80 V Collector to emitter voltage VCEO -80 V Emitter to base voltage VEBO -5 V Collector current IC -300 mA Collector current(Pulse) * IC -500 mA Total power dissipation PT 2.0 W Junction temperature Tj 150 Tstg -55 to +150 Storage temperature range * PW 10ms,duty cycle 50%. Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = -80 V, IE = 0 Testconditons -100 nA Emitter cutoff current IEBO VEB = -5.0 V, IC = 0 -100 nA DC current gain * hFE VCE = -1.0 V, IC = -50 mA 90 200 30 80 VCE(sat) IC = -300mA, IB = -30mA Base saturation voltage * VBE(sat) IC = -300mA, IB = -30mA Gain bandwidth product Output capacitance * Pulsed: PW -0.3 400 -0.6 V -0.9 -1.2 V -660 -700 mV VBE VCE = -6.0 V, IC = -10 mA fT VCE = -6.0 V, IE = 10 mA 100 MHz VCB = -6.0 V, IE = 0 , f = 1.0 MHz 13 pF Cob 350 ìs, duty cycle Typ VCE = -2.0 V, IC = -300 mA Collector saturation voltage * Base-emitter voltage * Min -600 2% hFE Classification Marking FM FL FK hFE 90 180 135 270 200 400 www.kexin.com.cn 1