KEXIN 2SB968

Transistors
SMD Type
Silicon PNP Epitaxial Planar Type
2SB968
TO-252
6.50
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
+0.15
-0.15
Possible to solder the radiation fin directly to printed cicuit board.
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.2
9.70 -0.2
Large collector power dissipation PC.
+0.15
0.50 -0.15
High collector-emitter voltage VCEO.
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-40
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-1.5
A
Peak collector current
ICP
-3
A
Collector power dissipation
PC
10
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
VCBO
IC = -1 mA, IE = 0
-50
V
Collector-emitter voltage
VCEO
IC = -2 mA, IB = 0
-40
V
Collector-base cutoff curent
ICBO
VCB = -20 V,IE = 0
-1
Collector cutoff curent
ICEO
VCE = -10 V,IB = 0
-100
ìA
Emitter-base cutoff current
IEBO
VEB = -5 V, IC = 0
-10
ìA
Forward current transfer ratio
hFE
VCE = -5 V, IC = -1 A
80
VCE = -5 V, IC = -1mA
10
Collector-emitter saturation voltage
VCE(sat) IC = -1.5 A, IB = -0.15 A
Base-emitter saturation voltage
VBE(sat) IC = -2 A, IB = -0.2 A
Transition frequency
fT
Collector output capacitance
Cob
220
ìA
V
-1
V
-1.5
V
VCE = -5 V, IC = -0.5 A , f = 200 MHz
150
MHz
VCB = -20V , IE = 0 , f = 1.0MHz
45
pF
hFE Classification
Rank
Q
R
hFE
80 160
120 220
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