KEXIN 2SB970

Transistors
IC
SMD Type
Silicon PNP Epitaxial Planar Type
2SB970
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
Mini type package,allowing downsizing of the equipment and automatic
0.4
3
Low collector-emitter saturation voltage VCE(sat).
1
0.55
insertion through the tape packing and the magazine packing.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-15
V
Collector-emitter voltage
VCEO
-10
V
Emitter-base voltage
VEBO
-7
V
Collector current
IC
-.5
A
Peak collector current
ICP
-1
A
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
VCBO
IC = -10 ìA, IE = 0
-15
V
Collector-emitter voltage
VCEO
IC = -1 mA, IB = 0
-10
V
-7
Emitter-base voltage
VEBO
IE = -10 ìA, IC = 0
Collector-base cutoff current
ICBO
VCB = -10 V, IE = 0
Forward current transfer ratio
hFE
VCE = -2 V, IC = -0.5A
V
-100
130
nA
350
Collector-emitter saturation voltage
VCE(sat) IC = -0.4 A, IB = -8 mA
-0.16
-0.3
V
Base-emitter saturation voltage
VBE(sat) IC = -0.4 A, IB = -8 mA
-0.8
-1.2
V
Transition frequency
fT
Collector output capacitance
Cob
VCB = -10 V, IE = 50 mA , f = 200 MHz
130
MHz
VCB = -10V , IE = 0 , f = 1.0MHz
22
pF
* Pulse measurement.
hFE Classification
1R
Marking
Rank
R
S
hFE
130 220
180 350
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