Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC1622A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 High DC current gain. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Total power dissipation PT 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 120V, IE=0 0.05 ìA Emitter cutoff current IEBO VEB = 5V, IC=0 0.05 ìA DC current gain * hFE Collector-emitter saturation voltage * Base-emitter voltage * * Pulse test: tp VCE =6V , IC = 0.1mA 100 500 900 0.07 0.30 V 0.65 V VBE VCE = 6V , IC = 1mA 0.55 0.58 fT VCE = 6V , IE = -1mA 50 110 Cob 350 ìs; d 135 VCE(sat) IC = 10mA , IB = 1mA Gain bandwidth product Output capacitance VCE =6V , IC = 1mA VCB = 30V , IE = 0 , f = 1.0MHz 1.6 MHz 2.5 pF 0.02. hFE Classification Marking D15 D16 D17 D18 hFE 135 270 200 400 300 600 450 900 www.kexin.com.cn 1