KEXIN 2SC2295

Transistors
IC
SMD Type
Silicon NPN Epitaxial Planar Type
2SC2295
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
High transition frequency fT.
1
0.55
Optimum for RF amplification of FM/AM radios.
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Mini type package, allowing downsizing of the equipment and
+0.05
0.1-0.01
+0.1
0.97-0.1
automatic insertion through the tape packing and the magazine
0-0.1
+0.1
0.38-0.1
packing.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
30
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
30
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Collector cutoff current
ICBO
VCB = 10 V, IE = 0
Forward current transfer ratio
hFE
VCB = 10 V, IC = -1 mA
70
100
Typ
Max
Unit
0.1
ìA
220
Transition frequency
fT
VCB = 10 V, IE = -1 mA, f = 200 MHz
Noise figure
NF
VCB = 10 V, IE = -1 mA, f = 5 MHz
2.8
4.0
dB
Reverse transfer impedance
Zrb
VCB = 10 V, IE = -1 mA, f = 2 MHz
22
50
Ù
Reverse transfer capacitance
Cre
VCB = 10 V, Ic = -1 mA, f = 10.7 MHz
0.9
1.5
pF
250
MHz
hFE Classification
Marking
VB
VC
hFE
70 140
110 220
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