Transistors IC SMD Type Silicon NPN Epitaxial 2SC2462 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 Low frequency amplifier. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC = 10ìA , IE = 0 50 V Collector-emitter breakdown voltage VCEO IC = 1mA , RBE = 40 V Emitter-base breakdown voltage VEBO IE = 10ìA , IC = 0 5 V Base-emitter voltage VBE VCE = 12V , IC = 2mA 0.75 Collector cutoff current ICBO VCB = 30V, IE=0 0.5 A Emitter cutoff current IEBO VEB = 2V, IC=0 0.5 A hFE VCE = 12V , IC = 2mA DC current gain VCE(sat) IC = 10mA , IB = 1mA Collector-emitter saturation voltage 100 V 500 0.2 V hFE Classification Marking LB Rank hFE LC B 100 LD C 200 160 D 320 250 500 www.kexin.com.cn 1 Transistors IC SMD Type 2SC2462 Typlcal Characteristics Fig.1 Maximum Collector Dissipation Curve 2 www.kexin.com.cn