Transistors IC SMD Type Silicon NPN Epitaxial 2SC2618 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low frequency amplifier. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 35 V Collector-emitter voltage VCEO 35 V Emitter-base voltage VEBO 4 V Collector current IC 500 mA Collector dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 35 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 35 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 4 V Collector cutoff current DC current gain ICBO VCB = 20V, IC = 0 hFE1 VCE = 3V , IC = 10mA 100 hFE2 VCE = 3V , IC = 500mA 10 VCE(sat) IC = 150mA , IB = 15mA Collector-emitter saturation voltage Base-emitter voltage VBE VCE = 3V , IC = 10mA 0.5 ìA 320 0.2 0.64 0.6 V V hFE Classification Marking RC RD hFE 100 200 160 320 www.kexin.com.cn 1