Transistors SMD Type Silicon NPN Epitaxial Type Transistor 2SC2712 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 700 1 Low noise: NF = 1dB (typ.), 10dB (max) 0.55 High hFE: hFE = 70 +0.1 2.4-0.1 Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.) 0.4 3 High voltage and high current: VCEO = 50 V, IC = 150 mA (max) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 30 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Tstg -55 to +125 Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 60 V, IE = 0 0.1 A Emitter cut-off current IEBO VEB = 5 V, IC = 0 0.1 A DC current gain hFE VCE = 6 V, IC = 2 mA Collector-emitter saturation voltage 70 VCE (sat) IC = 100 mA, IB = 10 mA 700 0.1 0.25 V Collector output capacitance Cob VCB = 10V, IE = 0, f = 1 MHz 2 3.5 pF Noise figure NF VCE = 6 V, IC = 0.1 mA , f = 1 KHz, RG=10KÙ 1 10 dB Transition frequency fT VCE = 10V, IC =1 mA 80 MHz hFE Classification Marking LO LY LG LL Rank O Y GR BL hFE 70 140 120 240 200 400 350 700 www.kexin.com.cn 1 Transistors SMD Type 2SC2712 Typlcal Characteristics Fig.1 Collector Emitter Voltage Fig.3 Collector Current Fig.5 Collector Current 2 www.kexin.com.cn Fig.2 Collector Current Fig.4 Collector Current Fig.6 Base Emitter Voltage Transistors SMD Type 2SC2712 Fig.7 Collector Current Fig.8 Collector Emitter Voltage Fig.9 Ambient Temperature www.kexin.com.cn 3